NCV8667 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

NCV8667

150 mA LDO Regulator with Enable, Reset and Early Warning

ON Semiconductor 

NCV8667

ELECTRICAL CHARACTERISTICS Vin = 13.2 V, VEN = 3 V, VDT = GND, VSI = Vout (NCV8667y0 only), RSI1, RSI2, RSI_ext not used,

Cin = 0.1 mF, Cout = 2.2 mF, for typical values TJ = 25°C, for min/max values TJ = −40 °C to 150°C; unless otherwise noted. (Notes 9

and 10)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

EARLY WARNING (SI and SO)

Integrated Sense Output Pull Up

Resistor

RSO

15

30

50

kW

Sense Output Low Voltage

Sense Output High Voltage

Maximum Sense Output Sink

Current

SI High to SO High Reaction Time

(Adjustable EW Threshold Option

NCV8667y0)

SI Low to SO Low Reaction Time

(Adjustable EW Threshold Option

NCV8667y0)

THERMAL SHUTDOWN

VSI < 1.2 V, ISO < 200 mA, Vout > 1 V

Vout = 4.5 V, VSI < 1.2 V, VSO = 0.25 V

VSI increasing

VSI decreasing

VSOL

−

0.15 0.25

V

VSOH

4.5

−

−

V

ISOmax

1.75

−

mA

−

tPSOLH

μs

−

7

12

tPSOHL

μs

−

3.8

5.0

Thermal Shutdown Temperature

(Note 11)

TSD

150

175

195

°C

Thermal Shutdown Hysteresis

(Note 11)

TSH

−

25

−

°C

9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.

10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty

cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

11. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.2 V.

12. Values based on design and/or characterization.

13. Iq for Preset EW Threshold Options is measured when RSI_ext is not used. For typical values of Iq vs RSI_ext see Figure 27.

14. See APPLICATION INFORMATION section for Reset Threshold and Reset Delay Time Options

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