MCR12DSMT4G(2013) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MCR12DSMT4G Datasheet PDF : 7 Pages
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MCR12DSM, MCR12DSN
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
2.0
IGT = 10 mA
0
100
1000
10 K
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate−Cathode Resistance
1000
400 V
100
600 V
VPK = 800 V
10
TJ = 110°C
1000
100
70°C
90°C
TJ = 110°C
10
1.0
100
1000
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
VD = 800 V
TJ = 110°C
100
IGT = 25 mA
IGT = 10 mA
10
1.0
100
1000
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
1.0
100
1000
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
ORDERING INFORMATION
Device
Package Type
Package
Shipping†
MCR12DSMT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
MCR12DSN−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MCR12DSNT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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