MCR12DSMT4G(2013) Ver la hoja de datos (PDF) - ON Semiconductor
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MCR12DSMT4G Datasheet PDF : 7 Pages
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MCR12DSM, MCR12DSN
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control; CDI (Capacitive Discharge Ignition); and small
engines.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
VDRM,
V
(TJ = −40 to 110°C, Sine Wave, 50 Hz to
VRRM
60 Hz)
MCR12DSM
600
MCR12DSN
800
On−State RMS Current
IT(RMS)
12
A
(180° Conduction Angles; TC = 75°C)
Average On−State Current
(180° Conduction Angles; TC = 75°C)
IT(AV)
7.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
ITSM
I2t
100
A
41
A2sec
Forward Peak Gate Power
(Pulse Width ≤ 10 msec, TC = 75°C)
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 10 msec, TC = 75°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 110 °C
Storage Temperature Range
Tstg − 40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
A
K
12
3
4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
YWW
R1
2DSxG
1
2
3
4
IPAK
CASE 369D
STYLE 4
YWW
R1
2DSxG
Y
WW
R12DSx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
June, 2013 − Rev. 7
Publication Order Number:
MCR12DSM/D
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