DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M95160-DFCS6TG(2014) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
M95160-DFCS6TG
(Rev.:2014)
STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
M95160-DFCS6TG Datasheet PDF : 47 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
M95160 M95160-W M95160-R M95160-DF
Instructions
Note:
3
#
The self-timed write cycle tW is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit
is read as “0” and a programmed bit is read as “1”.
Figure 14. Page Write (WRITE) sequence
                      
)NSTRUCTION
"IT!DDRESS
$ATA"YTE
$
  

3
               
#
$ATA"YTE
$ATA"YTE
$ATA"YTE.
$


1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don’t Care.
!)$
DocID022580 Rev 5
25/47
46

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]