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M28W320CT09GB1T

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

STMicroelectronics 

M28W320CT, M28W320CB

Table 17. Device Geometry Definition

Offset Word

Mod e

27h

28h

29h

Data

0016h

0001h

0000h

Description

Device Size = 2n in number of bytes

Flash Device Interface Code description: Asynchronous x16

2Ah

0000h

Maximum number of bytes in multi-byte program or page = 2n

2Bh

0000h

2Ch

0002h Number of Erase Block Regions within device

bit 7 to 0 = x = number of Erase Block Regions

M28W320CT

M28W320CT

Note:1. x = 0 means no erase blocking, i.e. the device erases at once in ”bulk.”

2. x specifies the number of regions within the device containing one or more con-

tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)

having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is consid-

ered to have 5 Erase Block Regions. Even though two regions both contain

16KB blocks, the fact that they are not contiguous means they are separate

Erase Block Regions.

3. By definition, symmetrically block devices have only one blocking region.

Erase Block Region Information

2Dh

2Eh

2Fh

30h

31h

32h

33h

34h

M28W320CB

2Dh

2Eh

001Eh

0000h

0000h

0001h

0007h

0000h

0020h

0000h

M28W320CB

0007h

0000h

bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in

size. The value z = 0 is used for 128 byte block size.

e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K

bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase

Block Region:

e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]

y = 0 means no blocking (# blocks = y+1 = ”1 block”)

Note: y = 0 value must be used with number of block regions of one as indicated

by (x) = 0

2Fh

0020h

30h

0000h

31h

001Eh

32h

0000h

33h

0000h

34h

0001h

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