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M28W320CT09GB1T

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

STMicroelectronics 

M28W320CT, M28W320CB

The suggested flow charts for programs that use

the programming, erasure and program/erase

suspend/resume features of the memories are

shown from Figures 11, 12, 13, 14 and 15.

Protection Register Program (PRP)

The Protection Register Program uses two write

cycles. The first command written is the protection

program command C0h. The second write opera-

tion latches the Address and the Data to be written

to the Protection Register (see Protection Register

and Security Block) and start the PE/C. Read op-

erations output the Status Register content after

the programming has started. The 64 bits user

programmable Segment (85h to 88h) are pro-

grammed 16 bits at a time, it can be protected by

the user programming bit 1 of the Protection Lock

register. The bit 1 of the Protection Lock register

protect the bit 2 of the Protection Lock Register.

Writing the bit 2 of the Protection Lock Register will

result in a permanent protection of the Security

Block. Attempting to program a previously protect-

ed protection Register will result in a status regis-

ter error (bit 1 and bit 4 of the status register will be

set to ’1’). The protection of the Protection Register

and/or the Security Block is not reversible.

The Protection Register Program cannot be sus-

pended.

Block Protect (BP)

The BP instruction use two write cycles. The first

command written is the protection setup 60h. The

second command is block Protect command 01h.

The address within the block being protected must

be given in order to write the protection state. If the

second command is not recognized by the C.I the

bit 4 and bit 5 of the status register will be set to in-

dicate a wrong sequence of commands. To read

the status register write the RSR command.

Block Unprotect (BU)

The instruction use two write cycles. The first com-

mand written is the protection setup 60h. The sec-

ond command is block Unprotect command d0h.

The address within the block being unprotected

must be given in order to write the unprotection

state. If the second command is not recognized by

the C.I the bit 4 and bit 5 of the status register will

be set to indicate a wrong sequence of com-

mands. To read the status register write the RSR

command.

Block Lock (BL)

The instruction use two write cycles. The first com-

mand written is the protection setup 60h. The sec-

ond command is block Lock command 2Fh. The

address within the block being Locked must be

given in order to write the Locking state. If the sec-

ond command is not recognized by the C.I the bit 4

and bit 5 of the status register will be set to indicate

a wrong sequence of commands. To read the sta-

tus register write the RSR command.

Table 13. Program, Erase Times and Program/Erase Endurance Cycles

(TA = 0 to 70°C or –40 to 85°C; VDD = 2.7V to 3.6V)

Parameter

Test Condition s

M28W320C

Min

Typ (1)

Max

Word Program

VPP = VDD

10

200

Double Word Program

VPP = 12V ±5%

10

200

Main Block Program

VPP = 12V ±5%

VPP = VDD

0.16

5

0.32

5

Parameter Block Program

VPP = 12V ±5%

VPP = VDD

0.02

4

0.04

4

Main Block Erase

VPP = 12V ±5%

VPP = VDD

1

10

1

10

Parameter Block Erase

VPP = 12V ±5%

VPP = VDD

0.8

10

0.8

10

Program/Erase Cycles (per Block)

Note: TA = 25 °C.

100,000

Unit

µs

µs

sec

sec

sec

sec

sec

sec

sec

sec

cycles

13/42

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