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IXGH60N60C2 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH60N60C2
IXYS
IXYS CORPORATION IXYS
IXGH60N60C2 Datasheet PDF : 5 Pages
1 2 3 4 5
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 50 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
(TO-247)
40
58
S
3900
pF
280
pF
97
pF
146
nC
28
nC
50
nC
18
25
95
35
0.48
ns
ns
150 ns
ns
0.8 mJ
18
ns
25
ns
0.45
mJ
130
ns
80
ns
1.2
mJ
0.26 K/W
0.25
K/W
IXGH 60N60C2
IXGT 60N60C2
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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