IXGH60N60C2 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH60N60C2 Datasheet PDF : 5 Pages
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IXGH 60N60C2
IXGT 60N60C2
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 7. Transconductance
TJ = -40º C
25º C
125º C
25 50 75 100 125 150 175 200
I C - Amperes
Fig. 9. Dependence of Eoff on IC
5
R G= 2 Ohms
RG = 10 Ohms - - - - -
4 VGE = 15V
VC E = 400V
3
TJ = 125 ºC
2
TJ = 25 ºC
1
0
20 30 40 50 60 70 80 90 100
I C - Amperes
Fig. 8. Dependence of Eoff on RG
6
TJ = 125º C
5 VGE = 15V
VCE = 400V
4
3
I C = 100A
I C = 75A
2
I C = 50A
1
I C = 25A
0
2
4
6
8
10
12
14
16
R G - Ohms
Fig. 10. Dependence of Eoff on Temperature
5
R G = 2 Ohms
R G= 10 Ohms - - - - -
4
VGE = 15V
VC E = 400V
3
I C = 100A
I C = 75A
2
I C = 50A
1
0
25
I C = 25A
50
75
100
125
TJ - Degrees Centigrade
Fig. 11. Gate Charge
15
VC E = 300V
12
I C= 50A
I G= 10mA
9
6
3
10000
1000
100
Fig. 12. Capacitance
f = 1M Hz
Cies
Coes
Cres
0
0 20 40 60 80 100 120 140 160
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
10
0
5 10 15 20 25 30 35 40
VCE - Volts
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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