IRFP460NPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
IRFP460NPBF Datasheet PDF : 8 Pages
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IRFP460N, SiHFP460N
Vishay Siliconix
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 20A
16
VDS = 400V
VDS = 250V
VDS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
10msec
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91236
S-Pending-Rev. B, 23-Jul-08
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