IRFP460NPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFP460NPBF Datasheet PDF : 8 Pages
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IRFP460N, SiHFP460N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.45
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 Ab
VDS = 50 V, ID = 12 A
500
-
-
V
-
580
- mV/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.24
Ω
10
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz
-
VDS = 0 V to 400 Vc
-
-
VGS = 10 V
ID = 20 A, VDS = 400 V
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 20 A
-
RG = 4.3 Ω, RD= 13 Ω,
see fig. 10b
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
G
-
S
3540
-
350
-
30
-
pF
3930
-
95
-
200
-
-
124
-
40
nC
-
57
23
-
87
-
ns
34
-
33
-
-
20
A
-
80
Body Diode Voltage
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
550
825
ns
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb
Qrr
-
7.2 10.8 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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2
Document Number: 91236
S-Pending-Rev. B, 23-Jul-08
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