G15T120 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

G15T120

TrenchStop® Series

Infineon Technologies 

TrenchStop® Series

IGW15T120

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=600V,IC=15A,

VGE=0/15V,

RG=56Ω,

Lσ2)=180nH,

Cσ2)=39pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

50

30

520

60

1.3

1.4

2.7

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C,

VCC=600V,IC=15A,

VGE=0/15V,

RG= 56Ω

Lσ2)=180nH,

Cσ2)=39pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

50

35

600

120

2.0

2.1

4.1

Unit

max.

- ns

-

-

-

- mJ

-

-

2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.5 Nov. 09

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