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G15T120 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
G15T120
Infineon
Infineon Technologies Infineon
G15T120 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
td(off)
100ns tf
td(on)
10ns tr
TrenchStop® Series
1µs
td(off)
tf
100ns
10ns
IGW15T120
td(on)
tr
1ns
0A
10A
20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56Ω,
Dynamic test circuit in Figure E)
1ns
10Ω
35Ω
60Ω
85Ω
110Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
7V
6V
5V
max.
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.6mA)
Power Semiconductors
6
Rev. 2.5 Nov. 09

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