FQP13N50CF Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FQP13N50CF Datasheet PDF : 10 Pages
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FQP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
May 2006
FRFET TM
Features
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP13N50CF FQPF13N50CF
500
13
13*
8
8*
52
52*
± 30
530
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64
62.5
FQPF13N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
1
FQP13N50CF / FQPF13N50CF Rev. A1
www.fairchildsemi.com
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