FQP13N50CF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQP13N50CF Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
VGS = 10V
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
0
5
10
15
20
25
30
35
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
12
VDS = 100V
10
VDS = 250V
V = 400V
8
DS
6
4
2
※ Note : ID = 13A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
3
FQP13N50CF / FQPF13N50CF Rev. A1
www.fairchildsemi.com
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