FDN359BN Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

FDN359BN

N-Channel Logic Level PowerTrench™ MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward

VGS = 0 V, IS = 0.42 A (Note 2)

Voltage

trr

Diode Reverse Recovery Time

IF = 2.7A, diF/dt = 100 A/µs

Qrr

Diode Reverse Recovery Charge

0.42

A

0.7 1.2

V

12

20

ns

3

5

nC

otes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 250°C/W when mounted on a

0.02 in2 pad of 2 oz. copper.

b) 270°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDN359BN Rev A(W)

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