FDN359BN Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDN359BN Datasheet PDF : 6 Pages
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Typical Characteristics
15
VGS = 10V
12
4.5V
9
4.0V
6
3.5V
3.0V
3
2.5V
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.6
VGS = 3.0V
2.2
1.8
1.4
3.5V
4.0V
4.5V
5.0V 6.0
1
10.0V
0.6
0
3
6
9
12
15
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.2
ID = 2.7A
VGS = 10V
1.1
1
0.9
0.8
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.06
ID = 1.35A
0.04
TA = 125oC
TA = 25oC
0.02
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
VDS = 5V
12
9
6
TA = 125oC
-55oC
3
25oC
0
1
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
100
VGS = 0V
10
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN359BN Rev A(W)
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