FDN359BN Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDN359BN Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 µA
30
Breakdown Voltage Temperature
Coefficient
ID = 250 µA,Referenced to 25°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
TJ = -55OC
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
1
ID = 250 µA,Referenced to 25°C
VGS = 10 V,
ID = 2.7 A
VGS = 4.5 V, ID = 2.4 A
VGS = 10 V, ID = 2.7 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
15
VDS = 5V,
ID = 2.7 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 2.7 A,
V
21
mV/°C
1
µA
10
µA
±100 nA
1.8
3
V
–4
mV/°C
0.026 0.046 Ω
0.032 0.060
0.033 0.075
A
11
S
485 650
pF
105 140
pF
65
100
pF
1.8
Ω
7
14
ns
5
10
ns
20
35
ns
2
4
ns
5
7
nC
1.3
nC
1.8
nC
FDN359BN Rev A(W)
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