ESDA6V1M6 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

ESDA6V1M6

4- and 5-line Transil™ arrays for ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDA6V1M6, ESDA6V1-5M6

Table 1.

Symbol

Absolute maximum ratings (Tamb = 25 °C)

Parameter

Value Unit

ESD IEC 61000-4-2, air discharge

VPP ESD IEC 61000-4-2, contact discharge

MIL STD 883G- Method 3015-7: class 3B, (human body model)

PPP Peak pulse power dissipation (8/20 µs)(1)

Tj initial = Tamb

Ipp Repetitive peak pulse current typical value (8/20 µs)

Tj Junction temperature

Tstg Storage temperature range

TL

Maximum lead temperature for soldering during 10 s at 5 mm for

case

TOP Operating temperature range

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

±15

±11

kV

25

100

W

8

A

125

°C

-55 to +150 °C

260

°C

-40 to +125 °C

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

I

VRM Stand-off voltage

IF

VBR Breakdown voltage

VCL Clamping voltage

IRM Leakage current @ VRM

IPP Peak pulse current

αT Voltage temperature coefficient

VCL VBR VRM

VF

V

I RM

IR

Slope= 1/ Rd

I PP

VF Forward voltage drop

Symbol

Test Condition

Min Typ Max Unit

VBR IR = 1 mA

IRM VRM = 3 V

VF

IF = 10 mA

Rd

αT(1) IR = 1 mA

C

VR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS

1. ΔVBR = αT * (Tamb - 25 °C) * VBR (25 °C)

6.1

7.2

V

500 nA

1

V

1

Ω

5 10-4/ °C

70

pF

2/11

Share Link: