ESDA6V1M6 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
ESDA6V1M6 Datasheet PDF : 11 Pages
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ESDA6V1M6, ESDA6V1-5M6
Characteristics
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 3. Peak pulse power versus
exponential pulse duration
PPP [ Tj i n it i al ] /PPP[ Tj i n it i al = 2 5 °C]
1.1
PPP( W )
1000
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
0.0
0
T j(°C)
10
25
50
75
100
125
150
1
Tj initial = 25°C
t P(µs)
10
100
Figure 4.
Clamping voltage versus peak
pulse current (typical values,
8/20 µs waveform)
Figure 5. Forward voltage drop versus peak
forward current (typical values)
100.0
IPP( A)
8/20µs
Tj initial =25°C
10.0
1.0
1.E+00
IFM( A)
1.E-01
1.E-02
Tj =125°C
Tj =25°C
0.1
0
V CL (V)
10
20
30
40
50
60
1.E-03
V FM (V)
70
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
80
70
60
F=1MHz
VOSC=30mVRMS
Tj=25°C
50
40
30
20
10
V R(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IR [ Tj] / IR [ Tj= 2 5 °C]
100
VR =3V
10
1
25
50
T j(°C)
75
100
125
3/11
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