DIM800NSM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800NSM33-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Gate charge
g
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
E
Turn-off energy loss
OFF
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
DIM800NSM33-A000
Test Conditions
IC = 800A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) = 2.2Ω
C = 150nF
ge
L ~ 100nH
IF = 800A, VCE = 1800V,
dI /dt
F
=
4400A/µs
Min. Typ. Max. Units
-
1600
-
ns
-
200
-
ns
-
850
-
mJ
-
500
-
ns
-
300
-
ns
-
1000
-
mJ
-
24
-
µC
-
450
-
µC
-
650
-
A
-
500
-
mJ
Test Conditions
I = 800A
C
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) = 2.2Ω
C = 150nF
ge
L ~ 100nH
IF = 800A, VCE = 1800V,
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
1800
-
ns
-
250
-
ns
-
1000
-
mJ
-
500
-
ns
-
300
-
ns
-
1300
-
mJ
-
670
-
µC
-
670
-
A
-
850
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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