DIM800NSM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800NSM33-A000 Datasheet PDF : 10 Pages
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DIM800NSM33-A000
TYPICAL CHARACTERISTICS
1600
1400
Common emitter.
Tcase = 25˚C
1200
1000
800
600
400
200
0
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
1
2
3
4
5
6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
1400
Conditions:
Tcase = 125˚C
1200
Rg = 2.2 Ohms
Vcc = 1800V
Cge = 150nF
1000
800
600
400
200
0
0
Eon
Eoff
Erec
200
400
600
800
1000
Collector current, Ic - (A)
Fig. 5 Typical switching energy vs collector current
1600
Common emitter.
Tcase = 125˚C
1400
1200
1000
800
600
400
200
0
1
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
7.5 8
2000
Conditions:
1800
Tcase = 125˚C
IC = 800A
Vcc = 1800V
1600 Cge = 150nF
1400
1200
1000
800
600
400
200
0
2
2.5
3
3.5
Eon
Eoff
Erec
4
4.5
5
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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