DIM200PHM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200PHM33-A000 Datasheet PDF : 10 Pages
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DIM200PHM33-A000
TYPICAL CHARACTERISTICS
400
Common emitter.
Tcase = 25˚C
300
400
Common emitter.
Tcase = 125˚C
300
200
200
100
0
0
VGE = 20V
15V
12V
10V
1
2
3
4
5
6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
100
VGE = 20V
15V
12V
10V
0
1
2
3
4
5
6
7
8
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
500
Conditions:
Tc = 125°C,
Rg = 10 Ohms,
Vcc = 1800V,
400 Cge = 33nF
300
200
100
0
0
50
100
150
Collector current, IC - (A)
Eon
Eoff
Erec
200
Fig. 5 Typical switching energy vs collector current
700
Conditions:
Tc = 125°C
600
IC = 200A
Vcc = 1800V
Cge = 33nF
500
400
300
200
100
0
5
10
15
20
25
Gate resistance, Rg - (Ohms)
Eon
Eoff
Erec
30
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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