DIM200PHM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200PHM33-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
g
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200PHM33-A000
Test Conditions
IC = 200A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
C = 33nF
ge
L ~ 100nH
IF = 200A, VR = 1800V,
dI /dt
F
=
1100A/µs
Min. Typ. Max. Units
-
1300
-
ns
-
200
-
ns
-
170
-
mJ
-
640
-
ns
-
250
-
ns
-
290
-
mJ
-
6
-
µC
-
115
-
µC
-
165
-
A
-
130
-
mJ
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =10Ω
C = 33nF
ge
L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 1000A/µs
Min. Typ. Max. Units
-
1600
-
ns
-
250
-
ns
-
240
-
mJ
-
640
-
ns
-
300
-
ns
-
420
-
mJ
-
190
-
µC
-
185
-
A
-
220
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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