DIM200PHM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DIM200PHM33-A000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-A000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

ICES

I

GES

VGE(TH)

VCE(sat)

I

F

IFM

VF

C

ies

Cres

LM

R

INT

SCData

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC =20mA, VGE = VCE

V = 15V, I = 200A

GE

C

VGE = 15V, IC = 200A, , Tcase = 125˚C

DC

Diode maximum forward current

Diode forward voltage

Input capacitance

Reverse transfer capacitance

Module inductance - per switch

tp = 1ms

I = 200A

F

IF = 200A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

VCE = 25V, VGE = 0V, f = 1MHz

-

Internal transistor resistance - per switch

-

Short circuit. ISC

Tj = 125˚C, VCC = 2500V,

I1

t

p

≤

10µs,

V

CE(max)

=

V

CES

–

L*.

di/dt

I

2

IEC 60747-9

Note:

L* is the circuit inductance + LM

Min. Typ. Max. Units

-

-

1

mA

-

-

15 mA

-

-

2

µA

4.5

5.5

6.5

V

-

3.2

-

V

-

4.0

-

V

-

200

-

A

-

400

-

A

-

2.5

-

V

-

2.5

-

V

-

45

-

nF

-

2.5

-

nF

-

30

-

nH

-

0.54

-

mΩ

-

1300

-

A

-

1100

-

A

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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