DIM200PHM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM200PHM33-A000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-A000

Replaces August 2001, version DS5464-3.0

DIM200PHM33-A000

Half Bridge IGBT Module

Preliminary Information

DS5464-4.0 October 2001

FEATURES

s 10µs Short Circuit Withstand

s High Thermal Cycling Capability

s Non Punch Through Silicon

s Isolated MMC Base with AlN Substrates

KEY PARAMETERS

VCES

VCE(sat)

IC

IC(PK)

(typ)

(max)

(max)

3300V

3.2V

200A

400A

APPLICATIONS

s High Reliability Inverters

s Motor Controllers

s Traction Drives

The Powerline range of high power modules includes half

bridge, chopper, dual and single switch configurations covering

voltages from 600V to 3300V and currents up to 2400A.

The DIM200PHM33-A000 is a half bridge 3300V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand. This device is

optimised for traction drives and other applications requiring high

thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

1(E1/C2)

2(C1)

5(E1)

4(G1)

8(C1)

3(E2)

7(E2)

6(G2)

Fig. 1 Half bridge circuit diagram

ORDERING INFORMATION

Order As:

DIM200PHM33-A000

Note: When ordering, please use the whole part number.

Outline type code: P

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

Share Link: