DIM400GDM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM400GDM33-A000 Datasheet PDF : 10 Pages
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DIM400GDM33-A000
800
Tj = 25˚C
Tj = 125˚C
700
600
500
400
300
200
100
0
0 0.5
1 1.5
2 2.5
3 3.5
4
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
700
900
800
700
Chip
600
Module
500
400
300
200
100 Tcase = 125˚C
Vge = ±15V
Rg(min) = 4.7Ω
0
0
500 1000
1500
2000
2500
3000
Collector emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
3500
1000
600
100
500
400
10
Ic(max) DC
300
200
100
0
0 500 1000 1500 2000 2500 3000
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
3500
1
Tvj = 125˚C, Tc = 80˚C
0
1
10
100
1000
Collector emitter voltage, Vce - (V)
Fig. 10 Forward bias safe operating area
10000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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