DIM400GDM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
ICES
Collector cut-off current
I
GES
VGE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I
Diode forward current
F
IFM
Diode maximum forward current
VF
Diode forward voltage
C
ies
Cres
LM
R
INT
SCData
Input capacitance
Reverse transfer capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 40mA, VGE = VCE
V = 15V, I = 400A
GE
C
VGE = 15V, IC = 400A, , Tcase = 125˚C
DC
tp = 1ms
I = 400A
F
IF = 400A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
VCE = 25V, VGE = 0V, f = 1MHz
-
-
Tj = 125˚C, VCC = 2500V,
I1
t
p
≤
10µs,
V
CE(max)
=
V
CES
–
L*.
di/dt
I
2
IEC 60747-9
Note:
L* is the circuit inductance + LM
Min. Typ. Max. Units
-
-
2
mA
-
-
30 mA
-
-
4
µA
4.5
5.5
6.5
V
-
3.2
-
V
-
4.0
-
V
-
400
-
A
-
800
-
A
-
2.5
-
V
-
2.5
-
V
-
90
-
nF
-
5
-
nF
-
25
-
nH
-
0.26
-
mΩ
-
2600
-
A
-
2200
-
A
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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