CY7C1340G Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY7C1340G Datasheet PDF : 16 Pages
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CY7C1340G
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................... –65°C to +150°
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883,Method 3015)
Latch -up Current..................................................... >200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to VDDQ + 0.5V
Ambient
Range Temperature (TA)
VDD
VDDQ
Commercial 0°C to +70°C 3.3V −5%/+10% 2.5V−5%
Industrial –40°C to +85°C
to VDD
Electrical Characteristics Over the Operating Range [8, 9]
Parameter
Description
Test Conditions
Min.
VDD
VDDQ
VOH
VOL
VIH
VIL
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage[8]
Input LOW Voltage[8]
for 3.3V I/O, IOH = –4.0 mA
for 2.5V I/O, IOH = –1.0 mA
for 3.3V I/O, IOL = 8.0 mA
for 2.5V I/O, IOL = 1.0 mA
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
–5
except ZZ and MODE
Input Current of MODE Input = VSS
–30
Input = VDD
Input Current of ZZ
Input = VSS
–5
Input = VDD
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
–5
IDD
VDD Operating Supply
VDD = Max., IOUT = 0 mA,
4-ns cycle, 250 MHz
Current
f = fMAX = 1/tCYC
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
ISB1
Automatic CE
VDD = Max., Device Deselected, 4-ns cycle, 250 MHz
Power-down
VIN ≥ VIH or VIN ≤ VIL, f = fMAX = 5-ns cycle, 200 MHz
Current—TTL Inputs
1/tCYC
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
ISB2
Automatic CE
VDD = Max., Device Deselected, All speeds
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
ISB3
Automatic CE
VDD = Max., Device Deselected, 4-ns cycle, 250 MHz
Power-down
or VIN ≤ 0.3V or VIN > VDDQ – 5-ns cycle, 200 MHz
Current—CMOS Inputs 0.3V, f = fMAX = 1/tCYC
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
ISB4
Automatic CE Power-down VDD = Max., Device Deselected, All speeds
Current—TTL Inputs
VIN ≥ VIH or VIN ≤ VIL, f = 0
Notes: .
8. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
9. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Max. Unit
3.6
V
VDD
V
V
V
0.4
V
0.4
V
VDD + 0.3V V
VDD + 0.3V V
0.8
V
0.7
V
5
µA
µA
5
µA
µA
30
µA
5
µA
325
mA
265
mA
240
mA
225
mA
120
mA
110
mA
100
mA
90
mA
40
mA
105
mA
95
mA
85
mA
75
mA
45
mA
Document #: 38-05522 Rev. *D
Page 8 of 16
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