CY22801KSXC-XXX(2011) Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY22801KSXC-XXX Datasheet PDF : 23 Pages
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CY22801
Absolute Maximum Conditions
Parameter
VDD
TS
TJ
VIO
ESD
Description
Supply voltage
Storage temperature
Junction temperature
Input and output voltage
Electrostatic discharge voltage per MIL-STD-833, Method 3015
Min
–0.5
–65
–
VSS – 0.5
2000
Max
Unit
4.6
V
150
°C
125
°C
VDD + 0.5
V
–
V
Recommended Operating Conditions
Parameter
VDD
TA
CLOAD
tPU
Description
Operating voltage
Ambient temperature, commercial grade
Ambient temperature, industrial grade
Maximum load capacitance on the CLK output
Power-up time for VDD to reach the minimum specified voltage
(power ramps must be monotonic)
Min
Typ
Max Unit
3.14
3.3
3.47
V
0
–
70
°C
–40
--
85
°C
–
–
15
pF
0.05
–
500
ms
Recommended Crystal Specifications for non-VCXO Applications
Parameter
Name
Description
Min
Typ
Max Unit
FNOM
Nominal crystal frequency Parallel resonance, fundamental mode,
8
and AT cut
–
30
MHz
CLNOM
R1
Nominal load capacitance
Equivalent series resistance
(ESR)
Fundamental mode
6
–
30
pF
–
35
50
Ω
DL
Crystal drive level
No external series resistor assumed
–
0.5
2
mW
Pullable Crystal Specifications for VCXO Application Only[5]
Parameter
Name
Min
CLNOM
R1
R3/R1
DL
Crystal load capacitance
–
Equivalent series resistance
–
Ratio of third overtone mode ESR to fundamental mode ESR. Ratio is used
3
because typical R1 values are much less than the maximum spec.
Crystal drive level. No external series resistor assumed
–
F3SEPHI
Third overtone separation from 3 × FNOM (high side)
300
F3SEPLO
Third overtone separation from 3 ×FNOM (low side)
–
C0
Crystal shunt capacitance
C0/C1
Ratio of shunt to motional capacitance
180
C1
Crystal motional capacitance
14.4
Typ
Max Unit
14
–
pF
–
25
Ω
–
–
–
0.5
2
mW
–
–
ppm
–
–150 ppm
7
pF
–
250
18
21.6
fF
Note
5. Crystals that meet this specification include Ecliptek ECX-5788-13.500M, Siward XTL001050A-13.5-14-400, Raltron A-13.500-14-CL, and PDI HA13500XFSA14XC.
Document #: 001-15571 Rev. *E
Page 13 of 23
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