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Número de pieza
componentes Descripción
DG858BW45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG858BW45
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG858BW45 Datasheet PDF : 19 Pages
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DG858BW45
14000
Conditions:
A
12000
T
j
= 125˚C
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
B
10000
8000
C
6000
4000
2000
0
0
A: V
DM
= 100% V
DRM
B: V
DM
= 75% V
DRM
C: V
DM
= 50% V
DRM
500
1000
1500
2000
2500
On-state current I
T
- (A)
Figure 18. Turn-off energy vs on-state current
3000
14000
13000
V
DM
= 100% V
DRM
12000
11000
10000
9000
8000
7000
V
DM
= 75% V
DRM
Conditions:
I
T
= 3000A
T
j
= 125˚C
C
s
= 3.0µF
V
DM
= 50% V
DRM
6000
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI
GQ
/dt- (A/µs)
Figure 19. Turn-off energy loss vs rate of rise of reverse gate current
11/19
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