DG858BW45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

40.0

35.0

Conditions:

IT = 3000A

Cs = 3.0µF

30.0

25.0

20.0

Tj = 125˚C

Tj = 25˚C

15.0

20 25 30 35 40 45 50 55 60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Figure 22. Gate storage time vs rate of rise of reverse gate current

3.0

Conditions:

Cs = 3.0µF

dIGQ/dt = 40A/µs

2.0

Tj = 125˚C

Tj = 25˚C

1.0

0

0

500

1000

1500

2000

2500

3000

On-state current IT - (A)

Figure 23. Gate fall time vs on-state current

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