APM4532(2003) Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM4532
(Rev.:2003)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4532

Typical Characteristics

P-Channel

Output Characteristics

20

15

-VGS=6,7,8,9,10V

-VGS=5V

10

-VGS=4V

5

-VGS=3V

0

0

1

2

3

4

5

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

20

18

16

TJ=25°C

14

TJ=125°C

12

TJ=-55°C

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

-IDS=250uA

1.25

1.00

0.75

0.50

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

On-Resistance vs. Drain Current

0.250

0.225

0.200

0.175

-VGS=4.5V

0.150

0.125

0.100

-VGS=10V

0.075

0.050

0.025

0.000

0 1 2 3 4 5 6 7 8 9 10

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.

7

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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