APM4532(2003) Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM4532
(Rev.:2003)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4532

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

PD Maximum Power Dissipation

TA=25°C

TA=100°C

TJ Maximum Junction Temperature

TSTG

RθjA

Storage Temperature Range

Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

N-Channel P-Channel

30

-30

±25

±25

5

-3.5

20

-20

2

2

0.8

0.8

150

-55 to 150

62.5

Unit

V

A

W

°C

°C

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static

BVDSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

VGS=0V , IDS=250µA

VDS=24V , VGS=0V

VDS=-24V , VGS=0V

VDS=VGS , IDS=250µA

VDS=VGS , IDS=-250µA

IGSS Gate Leakage Current

VGS=±25V , VDS=0V

RDS(ON)a

Drain-Source On-state

Resistance

VSDa Diode Forward Voltage

VGS=10V , IDS=5A

VGS=4.5V , IDS=4A

VGS=-10V , IDS=-3.5A

VGS=-4.5V , IDS=-2.5A

ISD=1.7A , VGS=0V

ISD=-1.7A , VGS=0V

Notes

a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

APM4532

Unit

Min. Typ. Max.

N-Ch 30

P-Ch -30

N-Ch

P-Ch

V

1

µA

-1

N-Ch 1 1.5 2

V

P-Ch -1 -1.5 -2

N-Ch

P-Ch

±100 nA

±100

N-Ch

P-Ch

35 45

60 70

mΩ

85 95

135 150

N-Ch

P-Ch

0.7 1.3 V

-0.7 -1.3

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - Sep., 2002

www.anpec.com.tw

Share Link: