BUP200D Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BUP200D Datasheet PDF : 8 Pages
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BUP 200 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
G
Pin 2
C
Pin 3
E
Type
BUP 200 D
VCE IC
1200V 3.6A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Ordering Code
Q67040-A4420-A2
Values
Unit
1200
V
1200
± 20
A
3.6
2.4
7.2
4.8
8
48
W
50
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Dec-06-1995
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