BUP200D Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BUP200D

IGBT With Antiparallel Diode

Siemens AG 

BUP 200 D

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 1 A

20

V

VGE 16

14

12

400 V

800 V

10

8

6

4

2

0

0 4 8 12 16 20 24

32

QGate

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

Short circuit safe operating area

ICsc = f (VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH

10

Reverse biased safe operating area

ICpuls = f (VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

ICsc/IC(90°C)

6

ICpuls/IC

1.5

4

1.0

2

0

0 200 400 600 800 1000 1200 V 1600

Semiconductor Group

6

0.5

0.0

0 200 400 600 800 1000 1200 V 1600

Dec-06-1995

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