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AS4LC1M16S0 Ver la hoja de datos (PDF) - Alliance Semiconductor

Nรบmero de pieza
componentes Descripciรณn
Fabricante
AS4LC1M16S0
ALSC
Alliance Semiconductor ALSC
AS4LC1M16S0 Datasheet PDF : 29 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AC parameters common to all waveforms
CAS
โ€“7
Sym
Parameter
latency Min Max
3
โ€“
5.5
tAC CLK to valid output delay 2
โ€“
8.5
1
โ€“
18
tAH Address hold time
tAS Address setup time
tBDL Last data-in to burst stop
tCCD
Read/write command to
read/write command
โ€“
1
2
โ€“
0
โ€“
1
โ€“
tCDL
Last data-in to new
column address delay
1
โ€“
tCH CLK high-level width
2.75 โ€“
3
7 1000
tCK CLK cycle time
2 8.7 1000
1
20 1000
tCKED
CKE to CLOCK disable or
power-down entry mode
1
โ€“
tCKH CKE hold time
tCKS CKE setup time
tCL CLK low-level width
tCMH
CS, RAS, CAS, WE, DQM
hold time
1
โ€“
2
โ€“
2.75 โ€“
1
โ€“
tCMS
CS, RAS, CAS, WE, DQM
setup time
2
โ€“
Data-in to ACTIVE
tDAL command
3
5
โ€“
2
5
โ€“
1
4
โ€“
tDH Data in hold time
tDPL Data in to PRECHARGE
tDQD DQM to input data delay
DQM to data mask during
tDQM writes
1
โ€“
2
โ€“
1
โ€“
0
โ€“
DQM to data high Z
tDQZ during reads
2
โ€“
tDS Data in setup time
tDWD
Write command to input
data delay
2
โ€“
0
โ€“
3
โ€“
5.5
Data-out high-impedance
tHZ time
2
โ€“
8.5
1
โ€“
18
tLZ
Data-out low-impedance
time
1
โ€“
ยฎ
โ€“8
Min Max
โ€“
6
โ€“
7
โ€“
22
โ€“
1
2
โ€“
0
โ€“
1
โ€“
1
โ€“
3
โ€“
8
1000
10
1000
25
1000
1
โ€“
1
โ€“
2
โ€“
3
โ€“
1
โ€“
2
โ€“
5
โ€“
5
โ€“
4
โ€“
1
โ€“
2
โ€“
1
โ€“
0
โ€“
2
โ€“
2
โ€“
0
โ€“
โ€“
6
โ€“
9
โ€“
22
1
โ€“
AS4LC2M8S1
AS4LC1M16S1
โ€“10
Min
Max Unit Notes
โ€“
6
ns
6
โ€“
6
ns 6,8
โ€“
22
ns
6,8
โ€“
1
ns
7
2
โ€“
ns
7
0
โ€“
tCK
9
1
โ€“
tCK
9
1
โ€“
tCK
9
3
โ€“
ns
7
10
1000 ns
10
12
1000 ns
10
25
1000 ns
10
1
โ€“
tCK
1
โ€“
ns
2
โ€“
ns
3.5
โ€“
ns
7
1
โ€“
ns
2
โ€“
ns
5
โ€“
tCK 5,11
5
โ€“
tCK 5,11
4
โ€“
tCK 5,11
1
โ€“
ns
2
โ€“
tCK
12
1
โ€“
tCK
9
0
โ€“
tCK
9
2
โ€“
tCK
9
2
โ€“
ns
0
โ€“
tCK
9
โ€“
9
ns
13
โ€“
9
ns
13
โ€“
22
ns
13
1
โ€“
ns
5/21/01; v.1.1
Alliance Semiconductor
P. 8 of 29

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