AS4LC1M16S0 Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS4LC1M16S0

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

®

DC electrical characteristics

Parameter

Symbol

Input leakage current IIL

Output leakage

current

Operating current

(one bank active)

Precharge standby

current (power

down mode)

IOL

ICC1

ICC2P

ICC2PS

Precharge standby

current (non-power-

down mode)

ICC2N

ICC2NS

Active standby

current (power-

down mode)

ICC3P

ICC3PS

Active standby

current (non-power-

down mode, one

bank active)

ICC3N

ICC3NS

Operating current

(burst mode)

ICC4

Refresh current

ICC5

Test conditions

0V ≤ VIN ≤ VCC,

Pins not under test = 0V

DOUT disabled, 0V ≤ VOUT ≤ VCCQ

tRC ≥ min, IO = 0mA,

burst length = 1

CKE ≤ VIL(max), tCK = 15 ns

CKE and CLK ≤ VIL(max), tCK = ∞

CS ≥ VIH(min), CKE ≥ VIH(min),

tCK = 15 ns; input signals changed

once during 30 ns

CLK ≤ VIL(max), CKE ≥ VIH(min),

tCK = ∞; input signals stable

CKE ≤ VIL(max), tCK = 15 ns

CLK, CKE ≤ VIL(max), tCK = ∞

CKE ≥ VIH(min), CS ≥ VIH(min),

tCK = 15 ns; input signals changed

once during 30 ns

CKE ≥ VIH(min), CLK ≥ VIL(max),

tCK = ∞; input signals stable

IO = 0 mA

Page burst

All banks activated

tCCD = tCCD(min)

tRC ≥ tRC(min)

Self refresh current ICC6

CL = CAS latency.

CKE ≤ 0.2 V

–7

–8

–10

Min Max Min Max Min Max Unit Notes

–5 +5 –5 +5 –5 +5 µA

–10 +10 –10 +10 –10 +10 µA

CL =3

1,3,

– 140 – 100 – 100 mA 4,5

– 2.0 – 2.0 – 2.0 mA

– 2.0 – 2.0 – 2.0 mA

– 30 – 30 – 30 mA 1,2,3

– 6 – 6 – 6 mA 1,2,3

– 2 – 2 – 2 mA 1,2,3

– 2 – 2 – 2 mA 1,2,3

– 35 – 35 – 35 mA 1,2,3

– 10 – 10 – 10 mA 1,2,3

CL =3

CL =2

CL =1

140 – 130 – 120

125

–

115

–

100 mA

1,2,

3,5

80 – 70 – 70

100 –

90

–

80

mA

1,2,

3,5

2 – 2 – 2 mA

1 – 1 – 1 mA 15

5/21/01; v.1.1

Alliance Semiconductor

P. 7 of 29

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