BR34E02-W Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BR34E02-W

Double-cell Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory

ROHM Semiconductor 

TECHNICAL NOTE

Double-cell Memory for Plug & Play

DDR/DDR2

(For memory module) SPD Memory

BR34E02-W

●Description

BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features

・256×8 bit architecture serial EEPROM

・Wide operating voltage range: 1.7V-3.6V

・Two-wire serial interface

・High reliability connection using Au pads and Au wires

・Self-Timed Erase and Write Cycle

・Page Write Function (16byte)

・Write Protect Mode

Settable Reversible Write Protect Function: 00h-7Fh

Write Protect 1 (Onetime Rom)

: 00h-7Fh

Write Protect 2 (Hardwire WP PIN)

: 00h-FFh

・Low Power consumption

Write (at 1.7V ) : 0.4mA (typ.)

Read (at 1.7V ) : 0.1mA(typ.)

Standby ( at 1.7V ) : 0.1μA(typ.)

・DATA security

Write protect feature (WP pin)

Inhibit to WRITE at low VCC

・Compact package: TSSOP-B8, VSON008X2030

・High reliability fine pattern CMOS technology

・Rewriting possible up to 1,000,000 times

・Data retention: 40 years

・Noise reduction Filtered inputs in SCL / SDA

・Initial data FFh at all addresses

●BR34E02-W Series

Capacity Bit format

2Kbit

256X8

Type

BR34E02-W

Power Source Voltage

1.7V～3.6V

TSSOP-B8

●

VSON008X2030

●

Ver.A Aug.2007

Share Link: