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2SK3879 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SK3879 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3879
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 640 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.5 A
VDS = 20 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
±10
μA
±30
V
100
μA
800
V
2.0
4.0
V
1.35 1.7
Ω
2.5 5.2
S
1500
25
pF
140
tr
10 V
VGS
0V
ton
ID = 3.5 A VOUT
35
80
RL= 114 Ω
ns
tf
VDD ∼− 400 V
50
Duty 1%, tw = 10 μs
toff
220
Qg
35
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 6.5 A
22
nC
Qgd
13
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6.5 A, VGS = 0 V
IDR = 6.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
6.5
A
19.5
A
1.7
V
1200
ns
11.5
μC
Marking
K3879
Part No. (or abbreviation code)
Lot No.
(weekly code)
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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