Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SK3879 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3879
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Toshiba
2SK3879 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3879
5
C
C
om
O
m
M
o
M
n
O
s
N
ou
S
r
O
ce
URCE
Tc
Tc
=
=
2
2
5
5
°
°
C
C
Pu
P
l
U
se
LS
te
E
s
T
t
EST
4
I
D
−
V
DS
8,10
6
5.5
3
5.25
2
5
1
VGS=4.5V
0
0
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
I
D
−
V
DS
10
COMMON
C
S
o
O
m
U
m
RC
o
E
n
8,10
6
T
s
c
o
=
u
2
rc
5°
e
C
8
T
P
a
U
=
L
2
S
5
E
℃
T
P
ES
u
T
lse
5.75
test
6
5.5
4
5.25
5
2
VGS=4.5V
0
0
10
20
30
40
50
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
16
Common source
CO
V
M
D
M
S
O
=2
N
0
S
V
OURCE
VD
P
S
u
=
ls
2
e
0
t
V
est
12
PULSE TEST
I
D
−
V
GS
8
Ta=100℃
4
-55
25
0
0
2
4
6
8
10
GATE
−
SOURCE VOLTAGE V
GS
(V)
20
16
12
8
4
0
0
V
DS
−
V
GS
COM
C
M
o
O
m
N
m
S
on
OU
s
R
ou
C
r
E
ce
Tc
=
25°C
Ta=25℃
PULSE
P
T
u
E
l
S
se
T
test
ID=7A
3.5
1.5
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪ −
I
D
100
C
C
o
O
m
M
m
M
o
O
n
N
s
S
o
O
u
U
rc
R
e
CE
VDS
V
=
DS
2
=
0
2
V
0V
PU
P
LS
ul
E
se
TE
t
S
e
T
st
10
25
-55
Ta=100℃
1
10.00
R
DS (ON)
−
I
D
C
C
o
O
m
M
m
M
o
O
n
N
s
S
o
O
ur
U
c
R
e
CE
VGS
V
G
=
S
1
=
0
10
V
V
Tc
=
T
2
c
5
=
°
2
C
5℃
PU
P
L
u
S
l
E
se
TE
te
S
s
T
t
1.00
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.10
100
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]