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2SC2830 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SC2830
Iscsemi
Inchange Semiconductor Iscsemi
2SC2830 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
500
400
7
UNIT
V
V
V
IC
Collector current
20
A
PT
Total power dissipation
Tmb=25
200
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
/W

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