2SC2830 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC2830 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2830
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=12A; IB=2.4A
1.2
V
VBEsat Base-emitter saturation voltage
IC=12A; IB=2.4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.1 mA
ICEO
Collector cut-off current
VCE=400V; IB=0
0.1 mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1 mA
hFE-1
DC current gain
IC=2.4A ; VCE=5V
15
50
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
IC=12A ; VCE=5V
10
2
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