A3V56S30FTP Ver la hoja de datos (PDF) - Unspecified

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A3V56S30FTP

256M Single Data Rate Synchronous DRAM

Unspecified 

A3V56S30FTP

A3V56S40FTP

256M Single Data Rate Synchronous DRAM

Auto Precharge

Read with auto-precharge

In this operation, since precharge is automatically performed after completing a read operation, a precharge command need

not be executed after each read operation. The command executed for the same bank after the execution of this command

must be the bank active (ACT) command.

The next ACT command can be issued at the later time of either tRP after internal precharge or tRC after the previous ACT.

Write with auto-precharge

In this operation, since precharge is automatically performed after completing a burst write or single write operation, a

precharge command need not be executed after each write operation. The command executed for the same bank after the

execution of this command must be the bank active (ACT) command.

The next ACT command can be issued at the later time of either tDAL from the last input data cycle or tRC after the previous

ACT.

Revision 1.1

Page 18 / 39

Mar., 2010

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