SST27SF010-70-3C-NG Ver la hoja de datos (PDF) - Silicon Storage Technology
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SST27SF010-70-3C-NG
Silicon Storage Technology
SST27SF010-70-3C-NG Datasheet PDF : 23 Pages
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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
AC CHARACTERISTICS
Data Sheet
TABLE 11: READ CYCLE TIMING PARAMETERS VDD = 4.5-5.5V (TA = 0°C to +70°C (Commercial))
Symbol Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TCE
Chip Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
Output Enable Access Time
35
ns
TCLZ1
TOLZ1
CE# Low to Active Output
OE# Low to Active Output
0
ns
0
ns
TCHZ1 CE# High to High-Z Output
25
ns
TOHZ1
TOH1
OE# High to High-Z Output
Output Hold from Address Change
25
ns
0
ns
T11.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: PROGRAM/ERASE CYCLE TIMING PARAMETERS FOR SST27SF512
Symbol Parameter
Min
TAS
Address Setup Time
1
TAH
Address Hold Time
1
TPRT
OE#/VPP Pulse Rise Time
50
TVPS
OE#/VPP Setup Time
1
TVPH
OE#/VPP Hold Time
1
TPW
CE# Program Pulse Width
20
TEW
CE# Erase Pulse Width
100
TDS
Data Setup Time
1
TDH
Data Hold Time
1
TVR
OE#/VPP and A9 Recovery Time
1
TART
A9 Rise Time to 12V during Erase
50
TA9S
A9 Setup Time during Erase
1
TA9H
A9 Hold Time during Erase
1
Max
30
500
Units
µs
µs
ns
µs
µs
µs
ms
µs
µs
µs
ns
µs
µs
T12.0 1152
©2005 Silicon Storage Technology, Inc.
9
S71152-11-000
9/05
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