SST27SF010-70-3C-NG Ver la hoja de datos (PDF) - Silicon Storage Technology

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Fabricante

SST27SF010-70-3C-NG

512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

Silicon Storage Technology 

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash

SST27SF512 / SST27SF010 / SST27SF020

TABLE 14: REVISION HISTORY

Number

02 • 2002 Data Book

Description

03 • Document Control Release (SST Internal): No technical changes

04 • Corrected IH Supervoltage Current for A9 from 100 µA to 200 µA in Tables 5, 6, and 7

05 • Corrected the Test Conditions for IDD and IPPR in Table 5 on page 7

06 • Corrected the Max value for IPP from 1 mA to 3 mA (See Tables 6 and 7)

• Added MPNs for non-PB packages (See page 18)

07 • 2004 Data Book

• Corrected caption for Figure 5 from “Read Cycle” to “Chip-Erase”

08 • Removed 256 Kbit parts - refer to EOL Product Data Sheet S71152(02)

09 • Removed all 90 ns parts - refer to EOL Product Data Sheet S71152(03)

• Added RoHS compliance information on page 1 and in the “Product Ordering Infor-

mation” on page 18

• Added the solder reflow temperature to the “Absolute Maximum Stress Ratings” on

page 7.

10 • Removed obsolete Latch-up parameter from Table 10 on page 8

11 • Corrected VPP voltage from 11.4-12.6V to 11.4-12V

Data Sheet

Date

Feb 2002

Apr 2002

Jul 2002

Sep 2003

Nov 2003

Nov 2003

Apr 2004

Mar 2005

May 2005

Sep 2005

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

©2005 Silicon Storage Technology, Inc.

23

S71152-11-000

9/05

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