SST27SF010-70-3C-NG Ver la hoja de datos (PDF) - Silicon Storage Technology

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SST27SF010-70-3C-NG

512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

Silicon Storage Technology 

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash

SST27SF512 / SST27SF010 / SST27SF020

Data Sheet

TABLE 6: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512

VDD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C)

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

IPP

ILI

ILO

VH

IH

VPPH

VDD Erase or Program Current

VPP Erase or Program Current

Input Leakage Current

Output Leakage Current

Supervoltage for A9

Supervoltage Current for A9

High Voltage for OE#/VPP Pin

30 mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max

3 mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max

1 µA VIN=GND to VDD, VDD=VDD Max

10 µA VOUT=GND to VDD, VDD=VDD Max

11.4 12 V CE#=OE#/VPP=VIL,

200 µA CE#=OE#/VPP=VIL, A9=VH Max

11.4 12 V

T6.5 1152

TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020

VDD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C)

Limits

Symbol Parameter

IDD

VDD Erase or Program Current

IPP

VPP Erase or Program Current

ILI

ILO

VH

IH

VPPH

Input Leakage Current

Output Leakage Current

Supervoltage for A9

Supervoltage Current for A9

High Voltage for VPP Pin

Min

11.4

11.4

Max

30

3

1

10

12

200

12

Units

mA

mA

µA

µA

V

µA

V

Test Conditions

CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V,

VDD=VDD Max

CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V,

VDD=VDD Max

VIN =GND to VDD, VDD=VDD Max

VOUT =GND to VDD, VDD=VDD Max

CE#=OE#=VIL,

CE#=OE#=VIL, A9=VH Max

T7.5 1152

TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

100

µs

T8.1 1152

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 9: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T9.0 1152

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 10: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

Endurance

1000

Cycles JEDEC Standard A117

TDR1

Data Retention

100

Years JEDEC Standard A103

T10.3 1152

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2005 Silicon Storage Technology, Inc.

8

S71152-11-000

9/05

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