DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VNH3ASP30TR-E Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VNH3ASP30TR-E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VNH3ASP30TR-E Datasheet PDF : 34 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
VNH3ASP30-E
Electrical specifications
Symbol
Table 11. Current sense (9V < VCC < 16V)
Parameter
Test conditions
Min Typ Max Unit
K1
IOUT/ISENSE
IOUT = 30A; RSENSE = 700;
TJ = -40 to 150°C
4000
4700
5400
K2
IOUT/ISENSE
IOUT = 8A; RSENSE = 700;
TJ = -40 to 150°C
3750 4700 5650
dK1/K1(1)
Analog sense current drift
IOUT = 30A; RSENSE = 700;
TJ = -40 to 150°C
-8
dK2/K2(1)
Analog sense current drift
IOUT = 8A; RSENSE = 700;
TJ = -40 to 150°C
-10
+8
%
+10
ISENSEO
Analog sense leakage
current
IOUT = 0A; VSENSE = 0V;
TJ = -40 to 150°C
0
70 µA
1. Analog sense current drift is deviation of factor K for a given device over (-40°C to 150°C and
9V < VCC < 16V) with respect to its value measured at TJ = 25°C, VCC = 13V
DocID10833 Rev 7
11/34
34

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]