PF28F1602C3TD70 Ver la hoja de datos (PDF) - Intel
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PF28F1602C3TD70 Datasheet PDF : 75 Pages
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C3 SCSP Flash Memory
Table 12. DC Characteristics (Sheet 2 of 2)
Symbol
Parameter
2.7 V – 3.3 V
Device Note
Unit
Typ Max
Test Conditions
ICCW
VCC Program Current
18
55
mA F-VPP = VPP1
Program in Progress
Flash
1,3
8
22
mA F-VPP = VPP2 (12 V)
Program in Progress
ICCE
VCC Erase Current
16
45
mA F-VPP = VPP1
Erase in Progress
Flash
1,3
8
15
mA F-VPP = VPP2 (12 V)
Erase in Progress
ICCES
VCC Erase Suspend Current
Flash 1,3,4
7
15
µA
F-CE# = VCC, Erase Suspend
in Progress
0.25µm
Flash
1,3,4
10
25
ICCWS
VCC Program Suspend Current
0.13µm
and
0.18µm
1,3,4
7
Flash
µA F-CE# = VCC, Program
Suspend in Progress
15
IPPD
IPPS
IPPR
IPPW
F-VPP Deep Power-Down Current
F-VPP Standby Current
Flash
Flash
F-VPP Read Current
Flash
F-VPP Program Current
Flash
F-RP# = GND ± 0.2 V
1
0.2
5
µA
F-VPP ≤ VCC
1
0.2
5
µA F-VPP ≤ VCC
1
2
±15
µA F-VPP ≤ VCC
1,2
50
200
µA F-VPP ≥ VCC
0.05 0.1
1,2
8
22
mA F-VPP =VPP1
Program in Progress
mA F-VPP = VPP2 (12 V)
Program in Progress
IPPE
F-VPP Erase Current
Flash
1,2 0.05 0.1
ma F-VPP = VPP1
Erase in Progress
IPPES
F-VPP Erase Suspend Current
0.2
5
µA F-VPP = VPP1
Erase Suspend in Progress
Flash
1,2
50
200
µA F-VPP = VPP2 (12 V)
Erase Suspend in Progress
IPPWS
0.2
5
µA F-VPP = VPP1
Program Suspend in Progress
F-VPP Program Suspend Current Flash
1,2
50
200
µA
F-VPP = VPP2 (12 V)
Program Suspend in Progress
Notes:
1.
All currents are in RMS unless otherwise noted. Typical values at nominal F-VCC/S-VCC, TCASE = +25 °C.
2.
Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).
3.
Sampled, not 100% tested.
4.
ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is sum of
ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR.
Datasheet
Intel® Advanced+ Boot Block Flash Memory (C3) SCSP Family
Order Number: 252636, Revision: 004
26 Aug 2005
29
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