28F016XS Ver la hoja de datos (PDF) - Intel
Número de pieza
componentes Descripción
Fabricante
28F016XS Datasheet PDF : 54 Pages
| |||
28F016XS FLASH MEMORY
E
5.4 DC Characteristics (Continued)
VCC = 3.3V ± 5%, TA = 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
ICCW
VCC Program
1,6
Current
8
12
mA VPP = 12.0V ± 5%
Program in Progress
8
17
mA VPP = 5.0V ± 10%
Program in Progress
ICCE
VCC Block Erase
1,6
Current
6
12
mA VPP = 12.0V ± 5%
Block Erase in Progress
9
17
mA VPP = 5.0V ± 10%
Block Erase in Progress
ICCES
VCC Erase
1,2
Suspend Current
3
6
mA CE0#, CE1# = VIH
Block Erase Suspended
IPPS
IPPR
IPPD
IPPW
IPPE
VPP Standby/Read
1
Current
VPP Deep Power-
1
Down Current
VPP Program
1,6
Current
VPP Erase Current
1,6
IPPES
VPP Erase
1
Suspend Current
± 1 ± 10 µA VPP ≤ VCC
30 200 µA VPP > VCC
0.2 5
µA RP# = GND ± 0.2V
10 15 mA VPP = 12.0V ± 5%
Program in Progress
15 25 mA Program in Progress
4
10
mA VPP = 12.0V ± 5%
Block Erase in Progress
14 20 mA VPP = 5.0V ± 10%
Block Erase in Progress
30 200
µA
VPP = VPPH1 or VPPH2
Block Erase Suspended
VIL
Input Low Voltage
6
–0.3
VIH
Input High Voltage
6
2.0
VOL
VOH1
VOH2
Output Low
Voltage
Output High
Voltage
6
6
2.4
VCC
–0.2
0.8
V
VCC
V
+0.3
0.4
V
VCC = VCC Min
IOL = 4 mA
V
VCC = VCC Min
IOH = –2.0 mA
V
VCC = VCC Min
IOH = –100 µA
28
Share Link: 