28F016XS Ver la hoja de datos (PDF) - Intel
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28F016XS Datasheet PDF : 54 Pages
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E
28F016XS FLASH MEMORY
5.4 DC Characteristics
VCC = 3.3V ± 5%, TA = 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
ILI
Input Load Current
1
ILO
Output Leakage
1
Current
ICCS
VCC Standby
1,5
Current
±1
µA VCC = VCC Max
VIN = VCC or GND
± 10 µA VCC = VCC Max
VOUT = VCC or GND
70 130 µA VCC = VCC Max
CE0#, CE1#, RP# = VCC ±
0.2V
BYTE#, WP#, 3/5# = VCC ±
0.2V or GND ± 0.2V
ICCD
VCC Deep
1
Power-Down
Current
1
4
mA VCC = VCC Max
CE0#, CE1#, RP# = VIH
BYTE#, WP#, 3/5# = VIH or
VIL
2
5
µA RP# = GND ± 0.2V
BYTE# = VCC ± 0.2V or
GND ± 0.2V
ICCR1
VCC Word/Byte
Read Current
1,4,5
ICCR2
VCC Word/Byte
1,4,
Read Current
5,6
65
85
mA VCC = VCC Max
CMOS: CE0# ,CE1# = GND
± 0.2V, BYTE# = GND ±
0.2V or VCC ± 0.2V,
Inputs = GND ± 0.2V or
VCC ± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 25 MHz, IOUT = 0 mA
60
75
mA VCC = VCC Max
CMOS: CE0#, CE1# = GND
± 0.2V, BYTE# = GND ±
0.2V or VCC ± 0.2V,
Inputs = GND ± 0.2V or
VCC ± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 16 MHz, IOUT = 0 mA
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